Low threshold quasi‐three‐level 946 nm laser operation of an epitaxially grown Nd:Y3Al5O12waveguide
نویسندگان
چکیده
منابع مشابه
Epitaxially grown GaAsN random laser
We have studied the photoluminescence properties of as-grown GaAs12xNx epitaxial layers grown on GaAs containing 0.6%, 1.77%, and 2.8% nitrogen. We found laser emission from thick (d .200 nm! GaAs0.972N0.028 layers exhibiting the characteristic lasing properties of random lasers. This is unusual because random lasers have so far only been associated with highly disordered or random media. We be...
متن کاملContinuous-wave operation of a room-temperature, diode-laser-pumped, 946-nm Nd:YAG laser.
Single-stripe diode-laser-pumped operation of a continuous-wave 946-nm Nd:YAG laser with less than 10-mW threshold has been demonstrated. A slope efficiency of 16% near threshold was shown with a projected slope efficiency well above a threshold of 34% based on results under Rhodamine 6G dye-laser pumping. Nonlinear crystals for second-harmonic generation of this source were evaluated. KNbO(3) ...
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Bulk and epitaxial composites of Yb:KLu(WO4)2 were grown and characterized. CW-lasing @1μm was demonstrated achieving conversion efficiencies of 50% and output powers of 1W for the bulk and 25.5% and 0.5W for the composite Yb:KLu(WO4)2. ©2005 Optical Society of America OCIS codes: (140.5680) Rare earth and transition metal solid-state lasers; (140.3380) Laser materials
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Mode locking based on an epitaxial composite of the monoclinic double tungstate crystal Yb:KLu(WO4)2 is realized. A 100 microm thin Yb:KLu(WO4)2 layer grown on a KLu(WO4)2 substrate is used as an active medium in a laser passively mode locked by a semiconductor saturable absorber. Pulse durations of 114 fs have been achieved for an average power of 31 mW at 1030 nm. Results in the femtosecond a...
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ژورنال
عنوان ژورنال: Applied Physics Letters
سال: 1993
ISSN: 0003-6951,1077-3118
DOI: 10.1063/1.109703